Since the FET utilize only one type of charge carrier either electrons or holes, the recovery time is very fast. Consequently, it has very low energy consumption and high efficiency.
Since the input (gate) is reversed biased, the input impedance of FET is very high in the range of 100M ohm which is why there is no input or gate current. Therefore, it is a voltage-controlled device. Such operation mode is called depletion mode.
While applying a reverse V GS decreases the channel length and the current I D. Applying a forward gate to source voltage V GS increases the channel width and thus the drain current I D. The width of the channel is controlled by the voltage applied at its gate. This is because the transistor transfers its resistance from one end to another end based on the input signal.Ī transistor is mainly classified into two types: The word “ Transistor” is the combination of two words “Trans” for “ Transfer” and “istor” for “ Res istor”. A small current or voltage at its input can be used to control very high output voltage or current. Heterojunction Bipolar Transistor (HBT)Ī transistor is a three-terminal semiconductor device that is used for the switching or amplification of a signal.
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